NCEP40T15G Datasheet - NCE Power Semiconductor

NCEP40T15G N-Channel Power MOSFET

The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP40T15G Features

* VDS =40V,ID =150A RDS(ON)=1.6mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested App

NCEP40T15G-NCEPowerSemiconductor.pdf