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NCEP40T11

N-Channel Super Trench Power MOSFET

NCEP40T11 Features

* VDS =40V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

NCEP40T11 General Description

The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

NCEP40T11 Datasheet (343.25 KB)

Preview of NCEP40T11 PDF

Datasheet Details

Part number:

NCEP40T11

Manufacturer:

NCE Power Semiconductor

File Size:

343.25 KB

Description:

N-channel super trench power mosfet.

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NCEP40T11 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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