NCEP40T11AG Datasheet - NCE Power Semiconductor

NCEP40T11AG - N-Channel Power MOSFET

The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP40T11AG Features

* VDS =40V,ID =110A RDS(ON)=2.5mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic Diagram DDDD DDDD Application

* DC/DC Converter

NCEP40T11AG-NCEPowerSemiconductor.pdf