NCEP40T12GU Datasheet - NCE Power Semiconductor

NCEP40T12GU N-Channel Super Trench Power MOSFET

The NCEP40T12GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP40T12GU Features

* VDS =40V,ID =120A RDS(ON)=2.05mΩ (typical) @ VGS=10V RDS(ON)=3.1mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating ly 100% UIS TESTED! On100% ∆Vds TESTED! DFN 5X6 Use t

NCEP40T12GU-NCEPowerSemiconductor.pdf