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NCEP40T11G

N-Channel Power MOSFET

NCEP40T11G Features

* VDS =40V,ID =110A RDS(ON)=2.4mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested App

NCEP40T11G General Description

The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP40T11G Datasheet (378.65 KB)

Preview of NCEP40T11G PDF

Datasheet Details

Part number:

NCEP40T11G

Manufacturer:

NCE Power Semiconductor

File Size:

378.65 KB

Description:

N-channel power mosfet.

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TAGS

NCEP40T11G N-Channel Power MOSFET NCE Power Semiconductor

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