NCE3050I - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE3050I
Manufacturer	NCE Power Semiconductor
File Size	341.31 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3050I-NCEPowerSemiconductor.pdf

The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: May 22, 2015 |