2SJ687 - MOS FIELD EFFECT TRANSISTOR
2SJ687 Features
* Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =
* 4.5 V, ID =
* 10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS =
* 3.0 V, ID =
* 10 A) RDS(on)3 = 20 mΩ MAX. (VGS =
* 2.5 V, ID =
* 10 A)
* 2.5 V drive available
* Avalanche capability rating
