Part number:
2SJ687
Manufacturer:
NEC
File Size:
196.75 KB
Description:
Mos field effect transistor.
* Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =
* 4.5 V, ID =
* 10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS =
* 3.0 V, ID =
* 10 A) RDS(on)3 = 20 mΩ MAX. (VGS =
* 2.5 V, ID =
* 10 A)
* 2.5 V drive available
* Avalanche capability rating
2SJ687
NEC
196.75 KB
Mos field effect transistor.
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