NP83P06PDG

MOS FIELD EFFECT TRANSISTOR

NEC

NP83P06PDG Features

* Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS =

* 10 V, ID =

* 41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS =

* 4.5 V, ID =

* 41.5 A)

* High current rating: ID(DC) = m83 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0

NP83P06PDG General Description

The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP83P06PDG-E1-AY NP83P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does .

NP83P06PDG Datasheet (209.98 KB)

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Datasheet Details

Part number:

NP83P06PDG

Manufacturer:

NEC

File Size:

209.98 KB

Description:

Mos field effect transistor.

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NP83P06PDG MOS FIELD EFFECT TRANSISTOR NEC

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NP83P06PDG Features

NP83P06PDG General Description

Datasheet Details

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Description:

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