UPD5702TU - 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

NEC

UPD5702TU Datasheet Preview — Preview of UPD5702TU PDF

Datasheet Details

Part number	UPD5702TU
Manufacturer	NEC
File Size	61.86 KB
Description	3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
Datasheet	UPD5702TU-NEC.pdf

UPD5702TU Product details

Description

The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications.This IC consists of two stage amplifiers.The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.

Features

Output Power : Pout = +21 dBm MIN. @Pin =.
5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V.
Single Supply voltage : VDS = 3.0 V TYP.
Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

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Published: Dec 21, 2017 |