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UPD5702TU

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

UPD5702TU Features

* Output Power : Pout = +21 dBm MIN. @Pin =

* 5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V

* Single Supply voltage : VDS = 3.0 V TYP.

* Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-de

UPD5702TU Datasheet (61.86 KB)

Preview of UPD5702TU PDF

Datasheet Details

Part number:

UPD5702TU

Manufacturer:

NEC

File Size:

61.86 KB

Description:

3v operation silicon ldmosfet rf power amplifier integrated circuit.
PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 .

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TAGS

UPD5702TU OPERATION SILICON LDMOSFET POWER AMPLIFIER INTEGRATED CIRCUIT NEC

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