UPD5702TU Datasheet, Circuit, NEC

UPD5702TU Features

• Circuit
• Output Power : Pout = +21 dBm MIN. @Pin =
• 5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply v

PDF File Details

Part number:

UPD5702TU

Manufacturer:

NEC

File Size:

61.86kb

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📄 Datasheet

Description:

3v operation silicon ldmosfet rf power amplifier integrated circuit. The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications

UPD5702TU Application

• Applications DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz a

TAGS

UPD5702TU

NEC

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