UPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

NEC

Description

PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 .
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.

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Datasheet Specifications

Part number: UPD5702TU
Manufacturer: NEC
File Size: 61.86 KB
Datasheet: UPD5702TU-NEC.pdf
Description: 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

Features

* Output Power : Pout = +21 dBm MIN. @Pin =
* 5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
* Single Supply voltage : VDS = 3.0 V TYP.
* Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-de

UPD5702TU Distributors

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UPD5702TU OPERATION SILICON LDMOSFET POWER AMPLIFIER INTEGRATED CIRCUIT NEC

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