Part number:
2SC4793AF
Manufacturer:
NELL SEMICONDUCTOR
File Size:
205.89 KB
Description:
High frequency npn power transistor.
2SC4793AF Datasheet (205.89 KB)
* High transition frequency: f T = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be installed to the heat sink with one screw BC E TO-220F (2SC4793AF) APPLICATIONS Power amplifier Driver stage amplifier C (2) B (1) NPN E (3) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwis
2SC4793AF Datasheet (205.89 KB)
2SC4793AF
NELL SEMICONDUCTOR
205.89 KB
High frequency npn power transistor.
📁 Related Datasheet
2SC4793 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Comple.
2SC4793 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications Driver Stage Amplifier Applications
2SC4793
Unit: mm
• High trans.
2SC4793 - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC4793
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
FEATURES
*High transition frequency *Power amplifier applic.
2SC4793 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4793
DESCRIPTION ·With TO-220F package ·Complem.
2SC4793D - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC4793D
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package.
/ Features
, 2SA1837D 。 H.
2SC4791 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4791
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 10 GHz Typ. • High gain, low noi.
2SC4796 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC4796
Silicon NPN Triple Diffused
Application
TV / character display horizontal deflection output
TO–3PFM
Features
• High speed switching tf ≤ 0..
2SC4796 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4796
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1700V(Min) ·High Switching Speed ·H.
