P1060ETF Datasheet (NIKO-SEM)

P1060ETF, N-Channel MOSFET

NIKO-SEM N-ChFainenldelEEffnehcatnTcreamnseinsttoMrodeHaPPlo11g00e66n00-FEErTTeFFe:S&T:OTLOe-2a-22d02-FF0rFeSe PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω ID 10A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current 3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C O