P1060AT Datasheet - UNIKC

P1060AT N-Channel MOSFET

P1060AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 10 6 40 6.8 236 Power DissipationA TC = 25 °C TC = 100 °C PD 156 63 Ope.

P1060AT Datasheet (438.83 KB)