P1065ATF Datasheet - UNIKC

P1065ATF N-Channel MOSFET

P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.75Ω @VGS = 10V ID 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 10 6 35 5.1 132 Power DissipationA TC = 25 °C TC = 100 °C PD 33 12 Ope.

P1065ATF Datasheet (447.39 KB)