P1065AT Datasheet - UNIKC

P1065AT N-Channel MOSFET

P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.75Ω @VGS = 10V ID 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM EAS 10 5 30 125 Power Dissipation TC = 25 °C TC = 100 °C PD 113 45 Operating Junction & Storage Te.

P1065AT Datasheet (320.58 KB)