P1060ATF Datasheet - UNIKC

P1060ATF N-Channel MOSFET

P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID IDM IAS 10 6.2 31 8.9 Avalanche Energy3 EAS 396 Power Dissipation TC= 25 °C TC= 100°C PD .

P1060ATF Datasheet (496.93 KB)