P1060ETF Datasheet - UNIKC

P1060ETF N-Channel MOSFET

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.77Ω @VGS = 10V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC= 25 °C TC= 100 °C ID 10 6 IDM 30 IAS 3.5 Avalanche Energy3 EAS 61 Power Dissipation TC= 25 °C TC= 100°C .

P1060ETF-UNIKC.pdf