P106AAT Datasheet - UNIKC

P106AAT N-Channel MOSFET

P106AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 65V 10mΩ @VGS = 10V 74A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 65 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID 74 38 IDM 180 Avalanche Current IAS 65 Avalanche Energy L = 0.1mH EAS 215 Power Dissipation TC = 25 °C PD 104 TC = 100 °C.

P106AAT Datasheet (299.62 KB)