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NTE2668 Silicon NPN Transistor High Current Switching
Features: D Adoption of FBET, MBIT process D Large Current Capacitance D Low Collector-To-Emitter Saturation Voltage D High Speed Switching D High Allowable Power Dissipation Applications: D DC-DC Converter D Relay Drivers D Lamp Drivers D Motor Drivers D Strobes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .