NTE262 - Silicon Complementary Transistors Darlington Power Amplifier

Product Overview

NTE

NTE262 Silicon Complementary Transistors Darlington Power Amplifier by NTE - Datasheet Preview — Datasheet preview – NTE262

Datasheet Details

Part number	NTE262
Manufacturer	NTE
File Size	24.86 KB
Description	Silicon Complementary Transistors Darlington Power Amplifier
Datasheet	NTE262 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE262, NTE261. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE262 datasheet.

Product details

Description

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base.

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Other Datasheets by NTE

NTE26 - Silicon NPN Transistor
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NTE263 - Silicon Complementary Transistors
NTE2631 - Integrated Circuit Quad Differential Line Driver
NTE2632 - Integrated Circuit Quad Differential Line Receiver
NTE2633 - Silicon Complementary Transistors

Published: Jul 26, 2016 |