NTE262 Features
* D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector
* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built
* In Base
* Emitter Shunt
Datasheet Details
NTE262, NTE261
NTE
24.86 KB
Silicon complementary transistors darlington power amplifier.
This datasheet PDF includes multiple part numbers: NTE262, NTE261.
Please refer to the document for exact specifications by model.
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NTE262 Distributor
