NTE263 - Silicon Complementary Transistors
NTE263 Features
* D High DC Current Gain: = 2500 Typ (NTE263) hFE = 3500 Typ (NTE264) D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector
* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built
* In Base
* Emitter Shunt Resisto
