NTE263 Datasheet - NTE

NTE263 Silicon Complementary Transistors

NTE263 Features

* D High DC Current Gain: = 2500 Typ (NTE263) hFE = 3500 Typ (NTE264) D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built

* In Base

* Emitter Shunt Resisto

Datasheet Details

NTE263

NTE

24.89 KB

Silicon complementary transistors.

NTE263 Distributor

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NTE263 NTE263 Silicon Complementary Transistors NTE