NTE263 - Silicon Complementary Transistors

Product Overview

NTE

NTE263 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE263

Datasheet Details

Part number	NTE263
Manufacturer	NTE
File Size	24.89 KB
Description	Silicon Complementary Transistors
Datasheet	NTE263 Datasheet
Additional preview pages of the NTE263 datasheet.

Product details

Description

The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: = 2500 Typ (NTE263) hFE = 3500 Typ (NTE264) D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage,.

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Published: May 9, 2005 |