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NTE261 - Silicon Complementary Transistors

NTE261 Description

NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier .
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifi.

NTE261 Features

* D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector
* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built
* In Base
* Emitter Shunt

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Datasheet Details

Part number
NTE261
Manufacturer
NTE
File Size
24.86 KB
Datasheet
NTE261_NTEElectronics.pdf
Description
Silicon Complementary Transistors

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Silicon Complementary Transistors NTE
NTE NTE261-like datasheet