NTE261 - Silicon Complementary Transistors

Product Overview

NTE

NTE261 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE261

Datasheet Details

Part number	NTE261
Manufacturer	NTE
File Size	24.86 KB
Description	Silicon Complementary Transistors
Datasheet	NTE261 Datasheet
Additional preview pages of the NTE261 datasheet.

Product details

Description

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base.

📁 Similar Datasheet

NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
NTE2662 - Silicon NPN Transistor High Frequency (NTE Electronics)
NTE2665 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
NTE2668 - Silicon NPN Transistor High Current Switching (NTE Electronics)
NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)

Other Datasheets by NTE

NTE26 - Silicon NPN Transistor
NTE262 - Silicon Complementary Transistors Darlington Power Amplifier
NTE263 - Silicon Complementary Transistors
NTE2631 - Integrated Circuit Quad Differential Line Driver
NTE2632 - Integrated Circuit Quad Differential Line Receiver
NTE2633 - Silicon Complementary Transistors

Published: May 9, 2005 |