NTE261 Datasheet - NTE

NTE261 Silicon Complementary Transistors

NTE261 Features

* D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built

* In Base

* Emitter Shunt

Datasheet Details

NTE261

NTE

24.86 KB

Silicon complementary transistors.

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NTE261 NTE261 Silicon Complementary Transistors NTE

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