BLF879PS Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF879PS Features

* Excellent ruggedness

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (470 MHz to 860 MHz)

* Internal input matching for high gain and optimum broadband operation

* Excellent reliabili

BLF879PS General Description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mo.

BLF879PS Datasheet (229.59 KB)

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BLF879PS

Manufacturer:

NXP ↗ Semiconductors

File Size:

229.59 KB

Description:

Uhf power ldmos transistor.

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BLF879PS UHF power LDMOS transistor NXP Semiconductors

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BLF879PS Features

BLF879PS General Description

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