A2I09VD015GNR1 Datasheet - NXP

A2I09VD015GNR1 Power Amplifiers

NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev. 0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on chip matching that makes it usable from 575 to 960 MHz. This multi stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. 900 MHz Typical Single Carrier W CDMA Characterization Performance: VDD = 48 Vdc, IDQ.

A2I09VD015GNR1 Features

* On

* chip matching (50 ohm input, DC blocked)

* Integrated quiescent current temperature compensation with enable/disable function (2)

* Designed for digital predistortion error correction systems

* Optimized for Doherty applications A2I09VD015NR1 A2I09VD015GNR1 575

A2I09VD015GNR1 Datasheet (541.45 KB)

A2I09VD015GNR1 Datasheet Preview — Preview of A2I09VD015GNR1 PDF

Datasheet Details

Part number:

A2I09VD015GNR1

Manufacturer:

NXP ↗

File Size:

541.45 KB

Description:

Power amplifiers.

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