Description
NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev.0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideba.
Features
* On
* chip matching (50 ohm input, DC blocked)
* Integrated quiescent current temperature compensation with
enable/disable function (2)
* Designed for digital predistortion error correction systems
Applications
* A2I09VD015NR1 A2I09VD015GNR1
575
* 960 MHz, 2 W AVG. , 48 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
TO
* 270WB
* 15 PLASTIC
A2I09VD015NR1
TO
* 270WBG
* 15 PLASTIC
A2I09VD015GNR1
VDS1A RFinA
VGS1A VGS2A VGS1B VGS2B
RFinB VDS1B
Quiescent Current Temperatur