A2I20D020GNR1, A2I20D020NR1 Datasheet - Freescale Semiconductor

A2I20D020GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Part Number C1, C2 3.9 pF Chip Capacitors ATC600F3R9BT250XT C3, C4 0.5 pF Chip Capacitors ATC600F0R5BT250XT C5, C6, C7, C8 4.7 F Chip Capacitors GRM31CR71H475KA12L C9, C10, C11, C12, C13, C14, C15, C16, C17, C18 10 F Chip Capacitors GRM31CR61H106KA12L Q1 RF LDMOS Power Amplifier A2

Freescale Semiconductor Technical Data Document Number: A2I20D020N Rev.

0, 5/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20D020N wideband integrated circuit is designed with on chip matching that makes it usable from 1400 to 2200 MHz.

This multi stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

1800 2200 MHz Typical Single Carrier W CDMA Characterization Performance: VD

A2I20D020GNR1 Features

* Extremely Wide RF Bandwidth

* RF Decoupled Drain Pins Reduce Overall Board Space

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) A2I20D020NR1 A2I20D020GNR1 1400

* 2200 MHz, 2.5 W A

A2I20D020NR1-FreescaleSemiconductor.pdf