A2I20H060NR1 Datasheet - Freescale Semiconductor

A2I20H060NR1 RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data Document Number: A2I20H060N Rev. 0, 2/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on chip matching that makes it usable from 1800 to 2200 MHz. This multi stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 1800 MHz Typical Doherty Single Carrier W CDMA Characterizat.

A2I20H060NR1 Features

* Advanced High Performance In

* Package Doherty

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)

* Designed for Digital Predistortion Error Correction Systems A2I20H060NR1 A2I20H060G

A2I20H060NR1-FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

A2I20H060NR1

Manufacturer:

Freescale Semiconductor

File Size:

951.42 KB

Description:

Rf ldmos wideband integrated power amplifiers.

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A2I20H060NR1 A2I20H060NR1 LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor

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