NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev.
2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideband integrated circuit is designed with on chip matching that makes it usable from 575 to 1300 MHz.
This multi stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
900 MHz Typical Single Carrier W CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 46 mA
