A2I09VD030N Power Amplifiers

NXP

Description

NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev.2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideba.

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Datasheet Specifications

Part number: A2I09VD030N
Manufacturer: NXP ↗
File Size: 486.69 KB
Datasheet: A2I09VD030N-NXP.pdf
Description: Power Amplifiers

Features

* On
* chip matching (50 ohm input, DC blocked)
* Integrated quiescent current temperature compensation with enable/disable function (1)
* Designed for digital predistortion error correction systems

Applications

* A2I09VD030N A2I09VD030GN 575
* 1300 MHz, 4 W AVG. , 48 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO
* 270WB
* 15 PLASTIC A2I09VD030N TO
* 270WBG
* 15 PLASTIC A2I09VD030GN 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated

A2I09VD030N Distributors

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A2I09VD030N Power Amplifiers NXP

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