Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev.
0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on chip matching that makes it usable from 3400 to 3800 MHz.
This multi stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
3500 MHz Typical Doherty Single Carrier W CDMA Characterizat
A2I35H060GNR1 Features
* Advanced High Performance In
* Package Doherty
* On
* Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
* Designed for Digital Predistortion Error Correction Systems A2I
Datasheet Details
A2I35H060GNR1, A2I35H060NR1
485.17 KB
Rf ldmos wideband integrated power amplifiers.
This datasheet PDF includes multiple part numbers: A2I35H060GNR1, A2I35H060NR1.
Please refer to the document for exact specifications by model.
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