NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev.
2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideband integrated circuit is designed with on chip matching that makes it usable from 575 to 1300 MHz.
This multi stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
900 MHz Typical Single Carrier W CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 46 mA
A2I09VD030GN Features
* On
* chip matching (50 ohm input, DC blocked)
* Integrated quiescent current temperature compensation with enable/disable function (1)
* Designed for digital predistortion error correction systems
* Optimized for Doherty applications A2I09VD030N A2I09VD030GN
Datasheet Details
A2I09VD030GN, A2I09VD030N
486.69 KB
Power amplifiers.
This datasheet PDF includes multiple part numbers: A2I09VD030GN, A2I09VD030N.
Please refer to the document for exact specifications by model.
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