Description
NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev.2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideba.
Features
* On
* chip matching (50 ohm input, DC blocked)
* Integrated quiescent current temperature compensation with
enable/disable function (1)
* Designed for digital predistortion error correction systems
Applications
* A2I09VD030N A2I09VD030GN
575
* 1300 MHz, 4 W AVG. , 48 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
TO
* 270WB
* 15 PLASTIC
A2I09VD030N
TO
* 270WBG
* 15 PLASTIC
A2I09VD030GN
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated