A2I20H080GNR1 Datasheet - NXP

A2I20H080GNR1 RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data Document Number: A2I20H080N Rev. 0, 3/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H080N wideband integrated circuit is an asymmetrical Doherty designed with on chip matching that makes it usable from 1800 to 2200 MHz. This multi stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 1800 MHz Typical Doherty Single Carrier W CDMA Characteriz.

A2I20H080GNR1 Features

* Advanced High Performance In

* Package Doherty

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Dis

A2I20H080GNR1 Datasheet (414.28 KB)