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A2I35H060NR1 RF LDMOS Wideband Integrated Power Amplifiers

A2I35H060NR1 Description

Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev.0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wide.

A2I35H060NR1 Features

* Advanced High Performance In
* Package Doherty
* On
* Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
* Designed for Digital Predistortion Error Correction Systems A2I

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Datasheet Details

Part number
A2I35H060NR1
Manufacturer
NXP ↗
File Size
485.17 KB
Datasheet
A2I35H060NR1-NXP.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers

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LDMOS Wideband Integrated Power Amplifiers NXP
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