A5G23H065N Datasheet - NXP

A5G23H065N Airfast RF Power GaN Transistor

A5G23H065N Airfast RF Power GaN Transistor Rev. 1 November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of the.

A5G23H065N Features

* High terminal impedances for optimal broadband performance

* Improved linearized error vector magnitude with next generation signal

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for low complexity linearization systems

A5G23H065N-NXP.pdf