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A5G23H065N

Airfast RF Power GaN Transistor

A5G23H065N Features

* High terminal impedances for optimal broadband performance

* Improved linearized error vector magnitude with next generation signal

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for low complexity linearization systems

A5G23H065N Datasheet (187.01 KB)

Preview of A5G23H065N PDF

Datasheet Details

Part number:

A5G23H065N

Manufacturer:

NXP ↗

File Size:

187.01 KB

Description:

Airfast rf power gan transistor.
A5G23H065N Airfast RF Power GaN Transistor Rev. 1

* November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cel.

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A5G23H065N Airfast Power GaN Transistor NXP

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