A5G35S004N - Airfast RF Power GaN Transistor
A5G35S004N Airfast RF Power GaN Transistor Rev.
4 November 2022 This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.
3500 MHz Typical Single Carrier W CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3400 MHz 19.3 19.5 9.9 <
A5G35S004N Features
* High terminal impedances for optimal broadband performance
* Designed for low complexity linearization systems
* Universal broadband driver
* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300
* 4
