A5G35S004N Datasheet - NXP

A5G35S004N Airfast RF Power GaN Transistor

A5G35S004N Airfast RF Power GaN Transistor Rev. 4 November 2022 This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. 3500 MHz Typical Single Carrier W CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3400 MHz 19.3 19.5 9.9 <.

A5G35S004N Features

* High terminal impedances for optimal broadband performance

* Designed for low complexity linearization systems

* Universal broadband driver

* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300

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A5G35S004N Datasheet (203.96 KB)