A5G35S004N Datasheet - NXP

A5G35S004N, Airfast RF Power GaN Transistor

A5G35S004N Airfast RF Power GaN Transistor Rev.4 * November 2022 This RF power GaN transistor is designed for cellular base station applicat.

datasheet Preview Page 1 from Datasheet4u.com

A5G35S004N-NXP.pdf

A5G35S004N Datasheet Preview — Preview of A5G35S004N PDF

Datasheet Details

Part number:

A5G35S004N

Manufacturer:

NXP ↗

File Size:

203.96 KB

Description:

Airfast RF Power GaN Transistor

Features

* High terminal impedances for optimal broadband performance
* Designed for low complexity linearization systems
* Universal broadband driver
* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300
* 4

Applications

* covering the frequency range of 3300 to 4300 MHz. 3500 MHz
* Typical Single
* Carrier W
* CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) hD Output PAR ACPR (

A5G35S004N Distributors

📁 Related Datasheet

📌 All Tags

A5G35S004N Airfast Power GaN Transistor NXP

NXP A5G35S004N-like datasheet