A5G38H045N Datasheet - NXP

A5G38H045N Airfast RF Power GaN Transistor

A5G38H045N Airfast RF Power GaN Transistor Rev. 1 November 2022 This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 4000 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 4000 MHz band. There is no guarantee of performance when this part is used in applications designed outside of the.

A5G38H045N Features

* High terminal impedances for optimal broadband performance

* Improved linearized error vector magnitude with next generation signal

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for low complexity linearization systems

A5G38H045N Datasheet (187.15 KB)