* High terminal impedances for optimal broadband performance
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditions
* Designed for low complexity linearization systems
A5G38H045N Datasheet (187.15 KB)
A5G38H045N
187.15 KB
Airfast rf power gan transistor.
A5G38H045N
Airfast RF Power GaN Transistor
Rev. 1
* November 2022
This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cel.
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