A5G19H605W19N Datasheet, Transistor, NXP

A5G19H605W19N Features

• Transistor
• High terminal impedances for optimal broadband performance
• Advanced high performance in-package Doherty
• Improved linearized error vector magnitude with nex

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Part number:

A5G19H605W19N

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NXP ↗

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485.05kb

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📄 Datasheet

Description:

Airfast rf power gan transistor. This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instant

A5G19H605W19N Application

• Applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and

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A5G19H605W19N

NXP

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