* High terminal impedances for optimal broadband performance
* Advanced high performance in
* package Doherty
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditio
A5G26H605W19N Datasheet (198.28 KB)
A5G26H605W19N
198.28 KB
Airfast rf power gan transistor.
A5G26H605W19N Airfast RF Power GaN Transistor Rev. 1 21 December 2023 This 85 W asymmetrical Doherty RF power GaN transistor is designed fo.
📁 Related Datasheet
A5G23H065N Airfast RF Power GaN Transistor (NXP)
A5G19H605W19N Airfast RF Power GaN Transistor (NXP)
A5G35H120N Airfast RF Power GaN Transistor (NXP)
A5G35S004N Airfast RF Power GaN Transistor (NXP)
A5G35S008N Airfast RF Power GaN Transistor (NXP)
A5G38H045N Airfast RF Power GaN Transistor (NXP)
A5-5 Cascadable Amplifier (MA-COM)
A500 SILICON RECTIFIER (Powerex Power Semiconductors)
A5000 EdgeLock Secure Authenticator (NXP)
A500K050 System Gates (Actel)
