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A5G26H605W19N - Airfast RF Power GaN Transistor

NXP

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Datasheet Details

Part number	A5G26H605W19N
Manufacturer	NXP ↗
File Size	198.28 KB
Description	Airfast RF Power GaN Transistor
Datasheet	A5G26H605W19N-NXP.pdf

A5G26H605W19N Product details

Features

High terminal impedances for optimal broadband performance.
Advanced high performance in.
package Doherty.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions.
Plastic package Product data sheet A5G26H605W19N 2496.
2690 MHz, 85 W Avg. , 48 V.

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Published: Jun 30, 2024 |