* High terminal impedances for optimal broadband performance
* Advanced high performance in
* package Doherty
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditio
A5G26H605W19N Datasheet (198.28 KB)
A5G26H605W19N
198.28 KB
Airfast rf power gan transistor.
A5G26H605W19N
Airfast RF Power GaN Transistor
Rev. 1
* 21 December 2023
This 85 W asymmetrical Doherty RF power GaN transistor is designed fo.
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