A5G35S008N Datasheet - NXP

A5G35S008N Airfast RF Power GaN Transistor

A5G35S008N Airfast RF Power GaN Transistor Rev. 2 November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. 3500 MHz Typical Single Carrier W CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3300 MHz 20.9 18.3 1.

A5G35S008N Features

* High terminal impedances for optimal broadband performance

* Designed for low complexity linearization systems

* Universal broadband driver

* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S008N 3300

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A5G35S008N-NXP.pdf