* High terminal impedances for optimal broadband performance
* Designed for low complexity linearization systems
* Universal broadband driver
* Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S008N 3300
* 3
A5G35S008N Datasheet (201.98 KB)
A5G35S008N
201.98 KB
Airfast rf power gan transistor.
A5G35S008N Airfast RF Power GaN Transistor Rev. 2 November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station a.
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