A5G35H120N - Airfast RF Power GaN Transistor

NXP

A5G35H120N Datasheet Preview — Preview of A5G35H120N PDF

Datasheet Details

Part number	A5G35H120N
Manufacturer	NXP ↗
File Size	402.47 KB
Description	Airfast RF Power GaN Transistor
Datasheet	A5G35H120N-NXP.pdf

A5G35H120N Product details

Description

This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz.

Features

High terminal impedances for optimal broadband performance.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions.
Designed for low complexity linearization systems.
Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 3500 MHz.
Typical Doherty single-carrier W-CDMA reference circuit performanc.

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Published: Aug 13, 2023 |