A5G35H120N Datasheet - NXP

Airfast RF Power GaN Transistor

A5G35H120N Features

* High terminal impedances for optimal broadband performance

* Improved linearized error vector magnitude with next generation signal

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for low complexity linearization systems

A5G35H120N General Description

This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is characterized and performance is guaranteed for applications operating in th.

A5G35H120N Datasheet (402.47 KB)