AFV10700H RF Power LDMOS Transistors

NXP

Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors N *Channel Enhancement *Mode Lateral MOSFETs These RF power transistors a.

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Datasheet Specifications

Part number: AFV10700H
Manufacturer: NXP ↗
File Size: 2.39 MB
Datasheet: AFV10700H-NXP.pdf
Description: RF Power LDMOS Transistors

Features

* Internally input and output matched for broadband operation and ease of use
* Device can be used in a single
* ended, push
* pull or quadrature configuration
* Qualified up to a maximum of 55 VDD operation
* High ruggedness, handles > 20:1 VSWR
* Integrated ESD prot

Applications

* operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS
* B transponders, DME and other complex pulse chains. Typical Performance: In 1030
* 1090

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AFV10700H Power LDMOS Transistors NXP

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