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AFV10700H - RF Power LDMOS Transistors

NXP

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Datasheet Details

Part number	AFV10700H
Manufacturer	NXP
File Size	2.39 MB
Description	RF Power LDMOS Transistors
Datasheet	AFV10700H-NXP.pdf

AFV10700H Product details

Features

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single--ended, push--pull or quadrature configuration.
Qualified up to a maximum of 55 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing.
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W).
Included in NXP product longe.

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Published: May 5, 2020 |