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AFV10700HS, AFV10700H RF Power LDMOS Transistors

AFV10700HS Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors N *Channel Enhancement *Mode Lateral MOSFETs These RF power transistors a.

AFV10700HS Features

* Internally input and output matched for broadband operation and ease of use
* Device can be used in a single
* ended, push
* pull or quadrature configuration
* Qualified up to a maximum of 55 VDD operation
* High ruggedness, handles > 20:1 VSWR
* Integrated ESD prot

AFV10700HS Applications

* operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS
* B transponders, DME and other complex pulse chains. Typical Performance: In 1030
* 1090

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFV10700HS, AFV10700H. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFV10700HS, AFV10700H
Manufacturer
NXP ↗
File Size
2.39 MB
Datasheet
AFV10700H-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: AFV10700HS, AFV10700H.
Please refer to the document for exact specifications by model.

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