Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors N *Channel Enhancement *Mode Lateral MOSFETs These RF power transistors a.
Features
* Internally input and output matched for broadband operation and ease of use
* Device can be used in a single
* ended, push
* pull or quadrature configuration
* Qualified up to a maximum of 55 VDD operation
* High ruggedness, handles > 20:1 VSWR
* Integrated ESD prot
Applications
* operating at 960 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS
* B transponders, DME and other complex pulse chains. Typical Performance: In 1030
* 1090
