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AFV141KGS, AFV141KH RF Power LDMOS Transistors

AFV141KGS Description

Freescale Semiconductor Technical Data Document Number: AFV141KH Rev.0, 4/2016 RF Power LDMOS Transistors High Ruggedness N *Channel Enhance.

AFV141KGS Features

* Internally Input and Output Matched for Broadband Operation and Ease of Use
* Device Can Be Used in a Single
* Ended, Push
* Pull or Quadrature Configuration
* Qualified up to a Maximum of 50 VDD Operation
* High Ruggedness, Handles > 20:1 VSWR
* Integrated ESD Prot

AFV141KGS Applications

* operating at frequencies from 1200 to 1400 MHz such as commercial L
* Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200
* 1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W Frequency (MHz) Signal Type Pout Gp

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFV141KGS, AFV141KH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFV141KGS, AFV141KH
Manufacturer
NXP ↗
File Size
428.85 KB
Datasheet
AFV141KH-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: AFV141KGS, AFV141KH.
Please refer to the document for exact specifications by model.

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