AFV141KH RF Power LDMOS Transistors

NXP

AFV141KH Description

Freescale Semiconductor Technical Data Document Number: AFV141KH Rev.0, 4/2016 RF Power LDMOS Transistors High Ruggedness N *Channel Enhance.

AFV141KH Features

* Internally Input and Output Matched for Broadband Operation and Ease of Use
* Device Can Be Used in a Single
* Ended, Push
* Pull or Quadrature Configuration
* Qualified up to a Maximum of 50 VDD Operation
* High Ruggedness, Handles > 20:1 VSWR
* Integrated ESD Prot

AFV141KH Applications

* operating at frequencies from 1200 to 1400 MHz such as commercial L
* Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200
* 1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W Frequency (MHz) Signal Type Pout Gp

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AFV141KH Datasheet Preview — Preview of AFV141KH PDF

Datasheet Details

Part number: AFV141KH
Manufacturer: NXP ↗
File Size: 428.85 KB
Datasheet: AFV141KH-NXP.pdf
Description: RF Power LDMOS Transistors

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Power LDMOS Transistors NXP

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