Description
Freescale Semiconductor Technical Data Document Number: AFV141KH Rev.0, 4/2016 RF Power LDMOS Transistors High Ruggedness N *Channel Enhance.
Features
* Internally Input and Output Matched for Broadband Operation and Ease of Use
* Device Can Be Used in a Single
* Ended, Push
* Pull or Quadrature Configuration
* Qualified up to a Maximum of 50 VDD Operation
* High Ruggedness, Handles > 20:1 VSWR
* Integrated ESD Prot
Applications
* operating at frequencies from 1200 to 1400 MHz such as commercial L
* Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200
* 1400 MHz reference circuit, VDD = 50 Vdc,
IDQ(A+B) = 100 mA, Pin = 25 W
Frequency (MHz)
Signal Type
Pout
Gp
