AFV121KGS Datasheet - NXP

AFV121KGS RF Power LDMOS Transistors

Freescale Semiconductor Technical Data Document Number: AFV121KH Rev. 0, 11/2015 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long p.

AFV121KGS Features

* Internally Input and Output Matched for Broadband Operation and Ease of Use

* Device Can Be Used Single

* Ended, Push

* Pull, or in a Quadrature Configuration

* Qualified up to a Maximum of 50 VDD Operation

* High Ruggedness, Handles > 20:1 VSWR

* Integrated ESD Pro

AFV121KGS Datasheet (0.99 MB)