AFV121KH RF Power LDMOS Transistors

NXP

Description

Freescale Semiconductor Technical Data Document Number: AFV121KH Rev.0, 11/2015 RF Power LDMOS Transistors High Ruggedness N *Channel Enhanc.

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Datasheet Specifications

Part number: AFV121KH
Manufacturer: NXP ↗
File Size: 0.99 MB
Datasheet: AFV121KH-NXP.pdf
Description: RF Power LDMOS Transistors

Features

* Internally Input and Output Matched for Broadband Operation and Ease of Use
* Device Can Be Used Single
* Ended, Push
* Pull, or in a Quadrature Configuration
* Qualified up to a Maximum of 50 VDD Operation
* High Ruggedness, Handles > 20:1 VSWR
* Integrated ESD Pro

Applications

* operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM. Typical Short Pulse

AFV121KH Distributors

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AFV121KH Power LDMOS Transistors NXP

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