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AFV121KHS, AFV121KH RF Power LDMOS Transistors

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Description

Freescale Semiconductor Technical Data Document Number: AFV121KH Rev.0, 11/2015 RF Power LDMOS Transistors High Ruggedness N *Channel Enhanc.

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This datasheet PDF includes multiple part numbers: AFV121KHS, AFV121KH. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFV121KHS, AFV121KH
Manufacturer
NXP ↗
File Size
0.99 MB
Datasheet
AFV121KH-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: AFV121KHS, AFV121KH.
Please refer to the document for exact specifications by model.

Features

* Internally Input and Output Matched for Broadband Operation and Ease of Use
* Device Can Be Used Single
* Ended, Push
* Pull, or in a Quadrature Configuration
* Qualified up to a Maximum of 50 VDD Operation
* High Ruggedness, Handles > 20:1 VSWR
* Integrated ESD Pro

Applications

* operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM. Typical Short Pulse

AFV121KHS Distributors

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