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BF1105R

N-channel dual-gate MOS-FETs

BF1105R Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz.

* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTI

BF1105R General Description

source drain gate 2 gate 1 APPLICATIONS
* VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gat.

BF1105R Datasheet (351.50 KB)

Preview of BF1105R PDF

Datasheet Details

Part number:

BF1105R

Manufacturer:

NXP ↗

File Size:

351.50 KB

Description:

N-channel dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997.

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TAGS

BF1105R N-channel dual-gate MOS-FETs NXP

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