BF1105R N-channel dual-gate MOS-FETs

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997.
source drain gate 2 gate 1 APPLICATIONS. VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communicat.

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Datasheet Specifications

Part number: BF1105R
Manufacturer: NXP ↗
File Size: 351.50 KB
Datasheet: BF1105R_PhilipsSemiconductors.pdf
Description: N-channel dual-gate MOS-FETs

Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz.
* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTI

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BF1105R N-channel dual-gate MOS-FETs NXP

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