Datasheet4U Logo Datasheet4U.com

BF1105WR N-channel dual-gate MOS-FETs

BF1105WR Description

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997.
source drain gate 2 gate 1 APPLICATIONS. VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communicat.

BF1105WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz.
* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTI

📥 Download Datasheet

Preview of BF1105WR PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BF1102R - Dual N-channel dual gate MOS-FETs (Philips)
  • BF115 - 2.0mm Pitch Socket (Global Connector Technology)
  • BF117 - NPN SIlicon Transistors (ETC)
  • BF118 - NPN SIlicon Transistors (ETC)
  • BF119 - NPN SIlicon Transistors (ETC)
  • BF1005 - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)
  • BF1005R - Silicon N-Channel MOSFET Tetrode (Infineon Technologies AG)
  • BF1005S - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)

📌 All Tags

N-channel dual-gate MOS-FETs NXP
NXP BF1105WR-like datasheet