BF1105WR Datasheet (NXP) - N-channel dual-gate MOS-FETs

BF1105WR, N-channel dual-gate MOS-FETs

source drain gate 2 gate 1 APPLICATIONS * VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gat

BF1105WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz.

* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTI