BF998 Datasheet - NXP

BF998 Silicon N-channel dual-gate MOS-FETs

Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in a.

BF998 Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTIO

BF998_PhilipsSemiconductors.pdf