BF998 Datasheet - NXP

Silicon N-channel dual-gate MOS-FETs

BF998 Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTIO

BF998 General Description

Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in a.

BF998 Datasheet (117.84 KB)

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Datasheet Details

Part number:

BF998

Manufacturer:

NXP ↗

File Size:

117.84 KB

Description:

Silicon n-channel dual-gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 0.

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BF998 Silicon N-channel dual-gate MOS-FETs NXP

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BF998 Features

BF998 General Description

Datasheet Details

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Description:

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