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BF998R Silicon N-channel dual-gate MOS-FETs

NXP

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 0.
Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.

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Datasheet Specifications

Part number: BF998R
Manufacturer: NXP ↗
File Size: 117.84 KB
Datasheet: BF998R_PhilipsSemiconductors.pdf
Description: Silicon N-channel dual-gate MOS-FETs

Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

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BF998R Silicon N-channel dual-gate MOS-FETs NXP

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