BLF10M6160 Datasheet - NXP

BLF10M6160 Power LDMOS transistor

160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 920 to 960 .

BLF10M6160 Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (700 MHz to 1000 MHz)

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding restric

BLF10M6160-NXP.pdf