BLF10M6160 Power LDMOS transistor

NXP

Description

BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev.1 * 24 June 2014 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.

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Datasheet Specifications

Part number: BLF10M6160
Manufacturer: NXP ↗
File Size: 136.03 KB
Datasheet: BLF10M6160-NXP.pdf
Description: Power LDMOS transistor

Features

* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (700 MHz to 1000 MHz)
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding restric

Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 920 to 960 32 32 22.5 27 ACPR (dBc) 41[1] [1] Test signal: 3GPP

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BLF10M6160 Power LDMOS transistor NXP

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